Effect of Alcohols on the Dry Etching of Sacrificial SiO2 in Supercritical CO2 


Vol. 18,  No. 3, pp. 280-286, Sep.  2012


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  Abstract

The dry etching of sacrificial SiO2 was performed in supercritical carbon dioxide. The etching of boron phosphor silica glass (BPSG), tetraethyl orthosilicate (TEOS), thermal SiO2, and Si-nitride (SiN) was investigated by using a two chamber system with HF/py etchant and alcohol additives. The etch rate of sacrificial SiO2 increased upon the addition of methanol. The etch selectivity of BPSG with respect to SiN was highest with IPA although the highest etch rate was resulted from methanol except BPSG. The etch rate increased with the temperature in HF/py/MeOH system. Especially the increase of the etch rate was much higher for BPSG with an increase in the reaction temperature. The etch residue was not reduced apparently upon the addition of alcohol cosolvents to HF/py. While the etch rate in HF/H2O was higher than HF/py/alcohol system, the rate decreased with the addition of alcohols to HF/H2O. The cantilever beam structure of high aspect ratios was released by the dry ething in supercritical carbon dioxide without damage.

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  Cite this article

[IEEE Style]

K. DH, J. MJ, L. KT, "Effect of Alcohols on the Dry Etching of Sacrificial SiO2 in Supercritical CO2," Clean Technology, vol. 18, no. 3, pp. 280-286, 2012. DOI: .

[ACM Style]

Kim DH, Jang MJ, and Lim KT. 2012. Effect of Alcohols on the Dry Etching of Sacrificial SiO2 in Supercritical CO2. Clean Technology, 18, 3, (2012), 280-286. DOI: .

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pISSN : 1598 - 9712
eISSN : 2288 - 0690

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