The Removal of Si3N4 Particles from the Wafer Surface Using Supercritical Carbon Dioxide Cleaning 


Vol. 24,  No. 3, pp. 157-165, Sep.  2018
10.7464/ksct.2018.24.3.157


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  Abstract

In this study, the removal of Si3N4 particles from the surface of a silicon wafer was investigated by using supercritical carbon dioxide, the IPA co-solvent and cleaning additive chemicals. First, the solubility of several surfactants and binders in supercritical carbon dioxide solubility and particle dispersibility in the binders were evaluated in order to confirm their suitability for the supercritical cleaning process. Particle removal experiments were carried out with adjusting various process parameters and reaction conditions. The surfactants used in the experiment showed little particle removal effect, producing secondary contamination on the surface of wafers. On the other hand, 5 wt% (with respect to scCO2) of the cleaning additive mixture of trimethyl phosphate, IPA, and trace HF resulted in 85% of particle removal efficiency after scCO2 flowing for 4 minutes at 50 ℃, 2000 psi, and the flow rate of 15 mL min-1.

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  Cite this article

[IEEE Style]

K. YH, C. HW, K. KM, K. A, L. KT, "The Removal of Si3N4 Particles from the Wafer Surface Using Supercritical Carbon Dioxide Cleaning," Clean Technology, vol. 24, no. 3, pp. 157-165, 2018. DOI: 10.7464/ksct.2018.24.3.157.

[ACM Style]

Kim YH, Choi HW, Kang KM, Karakin A, and Lim KT. 2018. The Removal of Si3N4 Particles from the Wafer Surface Using Supercritical Carbon Dioxide Cleaning. Clean Technology, 24, 3, (2018), 157-165. DOI: 10.7464/ksct.2018.24.3.157.

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eISSN : 2288 - 0690

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