Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide 


Vol. 17,  No. 4, pp. 300-305, Dec.  2011


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  Abstract

A mixture of supercritical carbon dioxide and a co-solvent was employed to strip a high-dose ion-implanted photoresist(HDIPR) from the surface of semiconductor wafers. The stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure supercritical CO2 (scCO2), which reduced the rinsing time significantly. The effect of co-solvents on the stripping efficiency was investigated. The wafer surfaces were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer.

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  Cite this article

[IEEE Style]

K. DH, L. ES, L. KT, "Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide," Clean Technology, vol. 17, no. 4, pp. 300-305, 2011. DOI: .

[ACM Style]

Kim DH, Lim ES, and Lim KT. 2011. Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide. Clean Technology, 17, 4, (2011), 300-305. DOI: .

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