Quantum Dot Sensitized Solar Cell Using PbS/ZnO Nanowires 


Vol. 16,  No. 4, pp. 292-296, Dec.  2010


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  Abstract

We fabricated quantum dot sensitized solar cells(QDSSC) using PbS as a sensitizer and measured the solar energy conversion efficiency. After growing ZnO nanowires on the substrate by low temperature ammonia solution reaction, PbS QDs were deposited on ZnO nanowires by SILAR(Successive ionic layer adsorption and reaction) method. The morphology and crystallinity ofPbS/ZnO nanowires were studied by SEM and XRD. In this study, the maximum conversion efficiency ofQDSSC using PbS was 0.075% at one sun, which was lower than that ofQDSSC using other sensitizers. The reasons it showed relatively low efficiency are i) the probability of type-I band gap arrangement between ZnO and PbS, ii) disturbance of electron migration by the various-sized PbS band gap, iii) stability dip by the chemical reaction of PbS QDs with electrolyte. To solve these problems, researches about controlling the size distribution of PbS and new type electrolyte would be needed.

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  Cite this article

[IEEE Style]

K. W and Y. K, "Quantum Dot Sensitized Solar Cell Using PbS/ZnO Nanowires," Clean Technology, vol. 16, no. 4, pp. 292-296, 2010. DOI: .

[ACM Style]

Kim W and Yong K. 2010. Quantum Dot Sensitized Solar Cell Using PbS/ZnO Nanowires. Clean Technology, 16, 4, (2010), 292-296. DOI: .