Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide 


Vol. 15,  No. 2, pp. 69-74, Jun.  2009


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  Abstract

A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/scCO2 mixture at 27.6 MPa and 343 K.

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  Cite this article

[IEEE Style]

K. SH and L. KT, "Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide," Clean Technology, vol. 15, no. 2, pp. 69-74, 2009. DOI: .

[ACM Style]

Kim SH and Lim KT. 2009. Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide. Clean Technology, 15, 2, (2009), 69-74. DOI: .

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pISSN : 1598 - 9712
eISSN : 2288 - 0690

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