A Study on the Influence of the Structural Characteristics of Cu/CeO2 Catalyst on the Low-Temperature Oxidation of Carbon Monoxide 


Vol. 26,  No. 4, pp. 286-292, Dec.  2020
10.7464/ksct.2020.26.4.286


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  Abstract

This study confirmed the effect of the Cu/CeO2-X catalyst on the CO oxidation activity at low temperature through the catalyst’s structure and reaction characteristics. The catalyst was prepared by the wet impregnation method. Cu/CeO2_X catalysts were manufactured by loading Cu (active metal) using CeO2 (support) formed at different calcination temperatures (300-600 ℃). Manufactured Cu/CeO2_X catalysts were evaluated for the low-temperature activity of carbon monoxide. The Cu/CeO2_300 catalyst showed an activity of 90% at 125 ℃, but the activity gradually decreased as the calcination temperature of the CeO2-X and Cu/CeO2_600 catalysts showed an activity of 65% at 125 ℃. Raman, XRD, H2-TPR, and XPS analysis confirmed the physicochemical properties of the catalysts. Based on the XPS analysis, the lower the calcination temperature of the CeO2 was, the higher the unstable Ce3+ species (non-stoichiometric species) ratio became. The increased Ce3+ species formed a solid solution bond between Cu and CeO2-X, and it was confirmed by the change of the CeO2 peak in Raman analysis and the reduction peak of the solid solution structure in H2-TPR analysis. According to the result, the formation of the solid solution bond between Cu and Ce has been enhanced by the redox properties of the catalysts and by CO oxidation activity at low temperatures.

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  Cite this article

[IEEE Style]

K. MS, C. GY, K. SW, H. SC, "A Study on the Influence of the Structural Characteristics of Cu/CeO2 Catalyst on the Low-Temperature Oxidation of Carbon Monoxide," Clean Technology, vol. 26, no. 4, pp. 286-292, 2020. DOI: 10.7464/ksct.2020.26.4.286.

[ACM Style]

Kim MS, Choi GY, Kim SW, and Hong SC. 2020. A Study on the Influence of the Structural Characteristics of Cu/CeO2 Catalyst on the Low-Temperature Oxidation of Carbon Monoxide. Clean Technology, 26, 4, (2020), 286-292. DOI: 10.7464/ksct.2020.26.4.286.