Post-annealing Effect of N-incorporated WO3 Films for Photoelectrochemical Cells 


Vol. 15,  No. 3, pp. 202-209, Sep.  2009


PDF
  Abstract

N-incorporated WO3 (WO3:N) films were synthesized using a reactive RF magnetron sputtering on unheated substrate and then post-annealed at different temperatures from 300 to 500℃ in air. The N anion narrowed optical band gap, due to its mixing effect with the O 2p valence states. Furthermore, it was found that the crystallinity of the WO3:N films was significantly improved by the post-annealing at 350℃ and higher. As a result, the WO3:N films exhibited much better photoelectrochemical performance, compared with pure WO3 films post-annealed at the same temperature.

  Statistics
Cumulative Counts from November, 2022
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.


  Cite this article

[IEEE Style]

A. KS, "Post-annealing Effect of N-incorporated WO3 Films for Photoelectrochemical Cells," Clean Technology, vol. 15, no. 3, pp. 202-209, 2009. DOI: .

[ACM Style]

Ahn KS. 2009. Post-annealing Effect of N-incorporated WO3 Films for Photoelectrochemical Cells. Clean Technology, 15, 3, (2009), 202-209. DOI: .

Search
(IN TITLE, AUTHOR, ABSTRACT,KEYWORDS)

Advanced Search ▼

POPULAR KEYWORDS
(TOP 10 KEYWORDS)

Recent Publications
(LAST 3 YEARS)

pISSN : 1598 - 9712
eISSN : 2288 - 0690

한국연구재단 등재학술지