A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma 


Vol. 7,  No. 3, pp. 203-214, Sep.  2001


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  Abstract

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as CHF3, CF4, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5 cm, 8 cm, 11.5 cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5 cm, 300 W, 180 secs, but surface roughness increased. Third, CF4 Plasma could get the best cleaning efficiency. Fourth, CHF3 plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to CHF3. But, we could get good cleaning efficiency in case added oxygen.

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  Cite this article

[IEEE Style]

K. HJ, K. KJ, C. CK, "A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma," Clean Technology, vol. 7, no. 3, pp. 203-214, 2001. DOI: .

[ACM Style]

Koo HJ, Ko KJ, and Chung CK. 2001. A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma. Clean Technology, 7, 3, (2001), 203-214. DOI: .

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한국연구재단 등재학술지